This paper describes some experimental results on the effects of high electric field in relatively thick-oxide MNOS (metal-nitride-oxide-semiconductor) capacitors.
The
C-
V characteristics were measured using a linear-ramp voltage after stressing with a negative bias. The non-steady-state inversion
C-
V curves exhibit two anomalous phenomena in C, namely, the existence of a minimum attributed to surface generation and a non-equilibrium decrease due to the tunneling of holes into the insulator. Examination with a steady-state
I-
V (the slopes of the Fowler-Nordheim characteristics) and quasi-static
C-
V measurements (the stress time dependence of the surface states formation) were added to augment the ramp voltage experiments. The set of results indicates that effects of high electric field on MNOS capacitors are dependent on the Fowler-Nordheim tunneling of ° “ holes ” from Si into Si
3N
4 via the thick SiO
2 layer.
The injected holes create hole traps in the SiO
2 layer and these traps make holes movable in the SiO
2 layer (hopping current).
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