巻号一覧
48 巻, 11 号
選択された号の論文の15件中1～15を表示しています
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橋本 初次郎1979 年48 巻11 号 p. 1021
発行日: 1979/11/10
公開日: 2009/02/09
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本庄 五郎1979 年48 巻11 号 p. 1022-1034
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーElectron microscopy of dielectric substances were summarized with respect to the following results: i) the characterization of ferroelectric domains in three phases of barium titanate, revealing stable pseudocubic {552} boundaries in the orthorhombic phase, ii) the failure of Friedel's law which contrasts domains of the antiparallel polarizations in tetragonal and orthorhombic phase, iii) large shifts induced by electric field of the transition temperatures amounting to nearly 200°C by a field of 4×106V/cm in thin crystals observed by electron microscope and to about 60°C by fields of 400kV/cm in thicker crystals observed by light microscope, iv) a reexamination of the expansion coefficients of free energy in terms of the polarization components on the basis of the transition temperature shifts, v) the correlations between diffuse and superlattice reflections with ferroelectric, superlattice twin and antiphase domains in perovskite compounds and vi) ferroelectric and antiphase domain structures and phase transition of gadrinium molybdate.抄録全体を表示PDF形式でダウンロード (6772K) -
深井 有1979 年48 巻11 号 p. 1035-1049
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーThe fact that reactions of some metals with hydrogen are reversibly controllable in terms of pressure and temperature offers a unique possibility of utilizing metal hydrides as energy conversion media. Principles and some examples of energy conversion are described including, in particular, those of heat pumps which allow transfer of heat between different temperatures without loss of availability. It is shown that hydrides with appropriate formation enthalpies are needed for each application.
A description is given of our present understanding on the formation enthalpy of hydrides. The spectroscopy and band calculations have shown that bonding states are formed between hydrogen and metal atoms. Experiments performed on partially substituted intermetallic hydrides, and models proposed for explaining the observed systematics are reviewed. In conclusion, we suggest that the formation enthalpy is essentially determined by nearest-neighbor interactions, and its concise expression should be useful as a guide for future material design.抄録全体を表示PDF形式でダウンロード (1377K) -
松原 直, 小長井 誠, 高橋 清1979 年48 巻11 号 p. 1050-1059
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーTheoretical spectral responses of graded-bandgap Ga1-xAlxAs/GaAs solar cells with a high Al mole fraction (x>0.8) and of fiat-bandgap Ga1-xAlxAs/GaAs solar cells with an extremely thin Ga1-xAlxAs window layer are calculated by solving the continuity equation on photo-induced carriers. Both solar cells show higher collection efficiencies than conventional Ga1-xAlxAs/ GaAs solar cells at wavelengths less than 500nm because of the reduction of surface recom-bination effect.
Optimum fiat-bandgap Ga1-xAlxAs/GaAs solar cells are fabricated by liquid phase epitaxy (LPE). Active area conversion efficiencies of solar cells obtained are 23.7% in sun light (AM 1.9, Pin=78.4 mW/cm2) and 26.3 % under 10 suns concentration. A minority carrier diffusion length is also evaluated.
The cell performance under various temperatures is measured under AM 1 solar simulator irradiation.抄録全体を表示PDF形式でダウンロード (818K) -
黒澤 晋, 国岡 昭夫, 酒井 善雄1979 年48 巻11 号 p. 1060-1064
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーSensitive p-n junction photodiodes for the 1.0-2.5μm wavelength range operating at room temperatures have been fabricated from n-type GaxIn1-xSb crystals, grown by the Bridgeman technique. The surface of the crystals could be converted from n-type to p-type by annealing in a vacuum. These photodiodes exhibited peak responsivity of 0.34A/W and R0A products of 4.6Ω•m2.抄録全体を表示PDF形式でダウンロード (380K) -
中川 恭彦1979 年48 巻11 号 p. 1065-1072
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーThe change in the phase velocity of elastic waves caused by a dc electric potential applied to a piezoelectric crystal is known as a nonlinear effect. The number of the independent components of the third-order piezoelectric constants and the third-order dielectric constants associated with this phenomenon depends on crystal symmetry. In order to determine these constants, the change of the phase velocity must be measured for various modes and propaga-ting directions of the elastic waves.
In this paper, a new measurement method of the third-order piezoelectric constants and the third-order dielectric constants in piezoelectric thin films such as ZnO, CdS, ZnS and AIN is proposed. With the increasing use of these materials as the substrate of a surface acoustic wave device, a detailed study of the physical properties of these materials is becoming increa-singly more important.抄録全体を表示PDF形式でダウンロード (593K) -
小沢口 治樹, 市川 忠嗣, 太田 日佐雄1979 年48 巻11 号 p. 1073-1079
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーThis film electroluminescent devices of three layered structure (insulator-phosphor-insulator) are constructed from evaporated films of different thickness. Dependence of emission spectra on angle is investigated in detail for the thin film devices, and it is shown that the form of emission spectra depends on the structure of the devices and viewing angles. Moreover it is clarified that these experimental results coincide with the results calculated from the model with multiple internal reflection and interference in the thin films. From these results, it is concluded that the difference of the emission spectra between the thin film devices on viewing angles is due to the multiple internal reflection and the interference effects in the thin films.抄録全体を表示PDF形式でダウンロード (553K) -
八田 一郎1979 年48 巻11 号 p. 1081
発行日: 1979/11/10
公開日: 2009/02/09
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上江洲 由晃1979 年48 巻11 号 p. 1082-1083
発行日: 1979/11/10
公開日: 2009/02/20
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江間 健司1979 年48 巻11 号 p. 1084
発行日: 1979/11/10
公開日: 2009/02/09
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寺島 浩, 藤原 史郎1979 年48 巻11 号 p. 1085-1093
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーThe nucleation and growth process of thin metal films vacuum-deposited on dielectric substrates has been studied by the use of a fused quartz microbalance in combination with an electron microscope. The combined use of them facilitates the investigation of the behavior of metal adatoms in the process of thin film formation. The thermal accommodation, the surface diffusion distance and the residence time of metal atoms adsorbed on dielectric substrates have been investigated.抄録全体を表示PDF形式でダウンロード (712K) -
外村 彰, 松田 強, 遠藤 潤二1979 年48 巻11 号 p. 1094-1100
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーElectron holography has recently made a remarkable progress due to the high coherence of an electron beam generated in a newly developed field emission electron microscope and almost reached the stage of practical reality.
This review describes firstly the objectives of electron holography: the improvement of electron microscope resolution and the development of new functions that have never been possible with conventional electron microscopes.
Secondly three technical advances of electron holography are also described: generation of the electron beam with high coherence, improvement of the electron hologram formation method and compensation of the spherical aberration of electron lens. Furthermore interference microscopy was realized which gives information on thickness and magnetization distribution of specimen.抄録全体を表示PDF形式でダウンロード (4162K) -
新村 信雄1979 年48 巻11 号 p. 1101-1104
発行日: 1979/11/10
公開日: 2009/02/09
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稲川 幸之助, 中村 一男1979 年48 巻11 号 p. 1105-1110
発行日: 1979/11/10
公開日: 2009/02/09
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三浦 登, 比留間 健之, 木戸 義勇, 河内 一芳1979 年48 巻11 号 p. 1111-1116
発行日: 1979/11/10
公開日: 2009/02/09
ジャーナル フリーPDF形式でダウンロード (512K)
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