巻号一覧
29 巻, 4 号
選択された号の論文の11件中1～11を表示しています
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黒柳 準, 砂野 豊次朗1960 年 29 巻 4 号 p. 211-217
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーChange in modulus of rigidity by cold-working and subsequent annealing is measured by using brass wires of 10.51, 31.47 and 40.73 per cent zinc and commercial brass wire of 32.66 per cent zinc. (1) In annealed state, the rigidity of brass wire of 10.51 per cent zinc is larger than that of pure copper wire; it decreases with the increase of the percentage of zinc, and at the percentages of 31.47 and 40.73, are rigidity is smaller than that of pure copper wire. On the other hand, the hardness increases with the increase of percentage of zinc. (2) The rigidity modulus shows rapid recovery even at room temperature in a short time after deformation. (3) The change in the temperature coefficient of rigidity modulus by the method of cold-working and degree of coldworking is different for different percentages of zinc in brass.抄録全体を表示PDF形式でダウンロード (575K) -
第2報:利用線の防護法橋詰 雅1960 年 29 巻 4 号 p. 217-225
発行日: 1960/04/10
公開日: 2009/02/20
ジャーナル フリーAs for X-rays to be guarded against, two cases are considered: the cases of direct rays and secondary rays from neighbouring objects. Of the two, the direct one is concerned with the following results.
1) For eliminating soft X-rays, filter effect of various materials is examined, and metals of intermediate atomic numbers are found most effective against the rays of 100_??_300 kV which are being used for non-destructive inspection.
2) Based on the curve of attenuation for lead, methods of protection and calculating the leadequivalence of thickness necessary for it under various given conditions are derived. 3) From the attenuation curves for materials other than lead, their lead-equivalences are obtained in terms of applied voltage, and the method of calculating the thickness of materials necessary for protection is established.抄録全体を表示PDF形式でダウンロード (924K) -
藤崎 春雄1960 年 29 巻 4 号 p. 226-233
発行日: 1960/04/10
公開日: 2009/02/20
ジャーナル フリーConcerning the sublimation method for growing CdS single crystals, the techniques and the growth mechanism are studied by using a vertical furnace. When the crucible charged with luminescent pure CdS powder is kept at 1150°C_??_1180°C for a period of 24_??_48 hours, two types of CdS are observed.
Type A crystals grown on the CdS powder of raw material in low range of supersaturation possess the habit faces formed by low index plane: {0001}, {1010} and {1120}. In those growth front surfaces, the layer growth steps are observed. The step heights of those layers are 200_??_1000Å when measured by interference fringes of 589mμ light. Type B crystals grown on the substrates of fused quartz or ceramics from vapor of CdS in high range of supersaturation are of polycrycrystalline mosaic structure formed by single crystals weighing from a few to 10g. In those surfaces, growth patterns are observed which are composed of microcrystals distributed along intersection lines between low index planes and crystal surface.抄録全体を表示PDF形式でダウンロード (5022K) -
田中 信義, 大坪 昭, 大谷 泰之1960 年 29 巻 4 号 p. 234-239
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーA tracer is made experimentally for observing and photographing the process of magnetic recording.
With this tracer, observation of not only the hysteresis loop of magnetic tape excited by thecurrent of distorted wave form containing D. C. component which has been considered difficult but also that of samples of low permeability can be made.
The tracer consists of an adding type integrator with a direct coupled D. C. amplifier, an oscilloscope circuit with two D. C. amplifiers of directly coupled to X axis and Y axis and one calibrator, and a highly stabilized power supply.
With attached two milli-ammeters, one corrected by the Maxwell scale and the other by the Oersted scale, not only the process is observed but also the number of generated magnetic flux in, samples is accurately measured.
The measuring circuits, sensitivity and accuracy of the integrator, methods of using and correcting the milli-ammeters, and at the end, photographs of magnetizing process obtained by using some examples are explained.抄録全体を表示PDF形式でダウンロード (1568K) -
福田 整司1960 年 29 巻 4 号 p. 240-246
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーCrystal structure and orientation of Fe-Co alloy electrodeposited from mixed solutions of Fe and Co sulfates on electrolytically eched or polished (111), (100), (110) and (311) faces of Cu single crystal are examined by means of electron diffraction. The results obtained are as follows.
(1) When the alloy is deposited at low c. d. from a solution composed of 0.75 mol/l of Co sulfate and 0.25 mol/l of Fe sulfate, only γ alloy (f. c. c.) of parallel orientation is formed att first, then a phase (b. c. c.) begins to coexist, and in later stage of the deposit, only a alloy grows.
Orientations of α alloy on any of the substrate surfaces mentioned above are mostly formed in such a way that the substrate and the deposit have similar arrangements of atoms on their planes of mutual contact.
(2) When the alloy is deposited from a solution composed of 0.25 mol/l of Co sulfate and 0.75 mol/l of Fe sulfate, only a alloy grows from the start independently of c. d.
Orientations of α alloy deposited from this solution are similar to those of Fe electrodeposited on Cu single crystal.
(3) Net plane of α alloy oriented on any of the substrate faces except (111) faces is not exactly parallel to that of the substrate at the initial thin layer, but is oblique to some axis on the substrate face. As thickness increases, such inclination decreases and the net plane of the deposit becomes parallel to that of the substrate.
(4) {211} twins of α alloy are formed when the deposit becomes thick and, with them irrational spots appear.抄録全体を表示PDF形式でダウンロード (2101K) -
Jiro NISHIMURA1960 年 29 巻 4 号 p. 247-255
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーThe method reported in the previous paper (I) has been revised in some points. By an improved cooling setup, a steep temperature gradient is obtained in any desired region of the furnace where the polycrystal is grown and heat-treated. The “resublimation zone” is introduced to prolong the heat treatment. Single crystals of over l cm in diameter are grown easily with sufficient reproducibility.
The chemical composition varies with the conditions of the crystal growth; the crystal grown at high temperature in H2S contains Cd in excess of its stoichiometric value creating impurity level.
Light figures are shown in both cases of chemical and thermal etching. They give information concerning the orientations of the facets of etched pits and growth hillocks.抄録全体を表示PDF形式でダウンロード (4739K) -
(第4報) II. 共軸屈折球面系への適用 (2)松居 吉哉1960 年 29 巻 4 号 p. 256-267
発行日: 1960/04/10
公開日: 2009/02/20
ジャーナル フリーIn the preceding paper, two sets of unique expressions of the intrinsic aberration coefficients are shown. From either of these, computing formulas can be developed by introducing suitable dependent variables. Among the dependent variables, the most favourable ones to arrange the formulas are J and its reciprocal _??_. Here J=_??_/hQ and _??_=hQ/≡1/J. From the expressions of the intrinsic coefficients by h, h and Q, the first system of computing formulas is developed (formulas from (II•5•2) to (II•5•4c)). From the expressions by h, h and Q, the second system of computing formulas is developed (formulas from (II•5•5) to (II•5•7c)). By using either of the computing systems, the values of the aberration coefficients can be obtained for one surface of the optical system. The aberration coefficients of the total system are obtained by addition of these values for all surfaces.
Both of these computing systems should give the same values of the aberration coefficients for the same surface. In the case of the first computing system, the spherical aberration coefficients are computed at the outset, then other coefficients are computed one by one with the aid of the factor J. On the other hand, in the case of the second computing system, the distortion coefficients are computed at the outset, then other coefficients are computed with the aid of the factor _??_. In the case of the surface, at which hQ tends to zero, the results obtained by the first computing system may be accompanied with serious error, and consequently, the second computing system is preferred. But in the case of the surface, at which hQ tends to zero, the first computing system is preferred. With a digital computor, such discrimination can be performed by proper programming, and the results can be automatically guarded against undesirable errors.
As numerical examples, typical Gauss-type and Sonnar-type objectives are cited. For these examples, numerical values of the 3rd and 5th order aberration coefficients, the aberration figures computed from these values and the comparison with the actual values are shown.抄録全体を表示PDF形式でダウンロード (725K) -
西脇 慈円1960 年 29 巻 4 号 p. 268-274
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーIn the Specimen Rotation Method the light flux reflected from the surface of specimen is measured in such a way that the illuminator and receptor axes of photometer are fixed at any given value of angle 2ø between them and the specimen is rotated in direction from the position of specular reflection toward the receptor axis. For the three types of the flux: Jo, the flux reflected from a constant area of the surface, Iθ, obtainable with small illuminator and large receptor fields, and Iθ' with large illuminator and small receptor fields-all being called I-θ curves as plotted against the angle of rotation, θ-, expressions are first introduced in relation to the surface roughness distribution, ρ(θ), that is, the total area of mirror facets inclined to mean surface by the amount of θ and included in unit area of the surface.
For finished metal surfaces, the form which ρ(θ) takes most frequently is assumed to be po exp (-βθ) or the algebraic sum of two such terms. By assuming a simple model surface hypothetically equivalent to actual ones, a correction formula for masking effect expected to occur particularly for large values of θ is also introduced to get good agreement with I-θ curve.
Various types of I-θ curve actually obtained for steel surfaces finished with emery papers are thus analyzed and explained satisfactorily.抄録全体を表示PDF形式でダウンロード (551K) -
安達 健1960 年 29 巻 4 号 p. 274-279
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーTime-lag of light emission from the time a flush tube is triggered is studied on Xe-, Ar-, Neand He-flush tubes by varying the tube pressure from 10 mmHg to 500mmHg, the tube length from 3cm to 20cm and the applied voltage from 200 V to 2000 V.
The conditions for all the tubes being the same, the time-lag of Xe tube is the shortest increasing in Ar, Ne, He sequence. Plot of time-lag versus relative over-voltage shows that the observed points lie on a smooth curve characteristic of the gas used independent of the gas pressure and tube length. For the same relative over-voltage, the time-lag is in reversed sequence, Xe tube is the longest followed by Ar, Ne, He tubes.
By utilizing the dependency of time-lag on gas pressure and voltage, a simple method of obtaining double-flush light with adjustable time separation in the range of a few micro-seconds is developed.抄録全体を表示PDF形式でダウンロード (1931K) -
山口 勝也1960 年 29 巻 4 号 p. 280-281
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーPDF形式でダウンロード (1460K) -
Shigeto YAMAGUCHI, Toshiro YAMASHINA1960 年 29 巻 4 号 p. 281-282
発行日: 1960/04/10
公開日: 2009/02/09
ジャーナル フリーPDF形式でダウンロード (1290K)
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