The influence of sputtering conditions (target-current, target-voltage and deposition-rate) on Mo-Si Schottky barrier formation was investigated. In this experiment, a tetrode plasma sputtering equipment was employed (NEC-type).
Forward current-voltage characteristics and saturation current of the sputtered Mo-Si Schottky barrier were influenced by the target-current (when target-voltage is constant, depositionrate is proportional to target-current). But, in the region of low target-voltage (V=400 V), these characteristics did not show any dependence on the target-current. On the contrary, a considerable dependence was observed in the region of high target voltage. Also, with the target-current kept constant), these characteristics are seen to be the most favourable when the target voltage lies between 500 V and 600 V.
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