When the Mo-Si Schottky barrier is formed by the plasma sputtering method, the sputtering condition exerts a subtle influence on the Si-surface. In the present report, the influence of the target voltage on Si surface was estimated from the characteristics of the Mo-Si Schottky barrier. The n-value was improved by increasing the target voltage, but a voltage dependence was observed The value of dφ/dε
1-3) estimated from the voltage dependence of the η value, at target voltages of 300V, 700V and 1, 500V, were 2, 190Å, 1, 999Å and 2, 067Å respectively. By “annealing”, this voltage dependence of the η-value and the value of dφ/dε were diminished.
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