Laser sintering method has been developed in order to make VO
2 sinterd film as a temperature sensitive switching element. Thick (40μm) films composed of fine mixed powder of VO
2 and glass were printed on alumina substrates and sintered by irradiation of ruby laser of which the energy density was controlled from 3.2 to 43Jcm
-2 by varying ND filters at the preheating stage of the substrates at 350°C. By examining the electrical resistance and its temperature hysteresis, X-ray analysis of the phase change and degree of shrinkage of the film after the laser irradiation, it has been proved that irradiation by ruby laser of the energy density of 6.5 to 10Jc
-2 gives a good sintering result for the practical use of the element. The VO
2 film thus made can be used as a printed circuit element in hybrid integrated circuitry, because the laser processing is controllable in time-duration of milliseconds and location of a millimeter or less.
抄録全体を表示