The minority carrier lifetime (τ
b) and the surface recombination velocity (
S) have been separately measured in water form silicon by two different contactless methods. In the first method, τ
b and
S are estimated from the primary mode lifetime (τ
1) which is measured from the primary mode decay curve of the same sample with two or three different thicknesses. In the second method, τ
b and
S are estimated by using the τ
1 and the amplitude ratio
R, which is defined as the ratio of the total mode (
Ptotal (0)) to the primary mode amplitude (P
1 (0)) at the initial time of the decay curve,
R=
Ptotai (0)/P
1 (0).
S of the mechanically lapped, chemically etched, and
p-type silicon treated to lower S are 2500_??_3000cm/sec, 1000_??_2000cm/sec, and 100_??_150cm/sec respectively. The values of
S in n/type silicon are about a half of those in
p-type silicon.
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