Electrically reprogrammable nonvolatile semiconductor memories are reviewed. Methods of charge injection into traps or a floating gate in insulator(s) of MIS structure are described. Application of a nonvolatile semiconductor memory to an analogue memory or an electrically erasable optical memory for visible and infrared light pattern is investigated.
Energy distribution curves are calculated for two cases by varying such factors as the normalized radial position, the incident angle and the normalized energy. In the first case, in which incident angular spreads are fixed at the optimum value of, √W/2i0, it is shown that FWHM can be expressed as 0. 63 w/r0, where w is the slit width and r0 is the mean radius of curvature. In the second case, the incident angle is determined by the incident position, the size of electron sources and the position of sources from the slit. Results show that there is a difference between the two cases, especially for FWB. In addition, resolutions are calculated by considering fluctuations of magnetic fields, the slit width and the incident angular spread. These parameters, involving electron energy, determine the optimum value for the orbital radius of the spectrometer.
Although the chemical properties of organic tin compounds have been investigated by numerous workers, little is known about their electrical properties or applications. The authors have investigated the insulating resistance, dielectric properties and magnetic susceptibilities of tetraethyltin (T. E. T.), tetra-n-propyltin (T. nP. T.), and tetra-n-butyltin (T. nB. T.) which are organic tin compounds with symmetrical molecular structure. It has been found that (1) the insulating resistance R of T. nP. T. is 8. 5×109 (Ω.cm) at room temperature and the activation energy obtained from the slope of curve log10R-1/T is 0.32 (eV). (2)the values of the dielectric constants of T. E. T. and T. nP. T. are εE=2.241 and εP=2.267, respectively, which are smaller than the dielectric constant of dry benzene εB=2.291 at 20°C. (3) the mesured values of molecular susceptibility χM (10-6cm-3/mol) of T. E. T., T. nP. T. and T. nB. T. are 165, 216, and 262, respectively, and these values are in satisfactory agreement with the theoretical values calculated by the Augus method.