From the author's recent experiments, it is concluded that alloyed In-Ge junctions are formed not by diffusion process
1) but by recrystallization proces
2) of Ge crystals, and on alloyed junction-diodes and-transistors the electric field dependency of their barrier capacitances obey the V
-1/2 law at higher reverse bias voltages, so that the alloyed In-Ge junctions are said to be abrupt which is characteristic to them.
From the measurements of capacitances, concentrations of donor impurities and mobility of electrons are derived directly. The life-times of minority carriers are calculated from the measurements of space charge widening effects or of the forward current densities of the junctions.
The results agree with the data by other prevailing methods and also with the theoretical values of the abrupt junctions.
The capacitances are measured directly by an ordinary capacitance bridge and Buntone “Q”-meter at frequencies ranging from 600 KC/s to 3 MC/s, and consequently no frequency dependency is found. The amplitudes of signal a. c. voltages are kept under lOmV.
The resistivities of n-type Ge used were 0.3 to 20Ω cm. measured by the four probes method, and their hole lifetimes were 10 to 500 μ sec. obtained by the Valdes' method at room temperatures.
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